Effect of Low Temperature Pre-annealing on Oxygen Related Donors Formation in N-Doped CZ-Silicon

Authors

  • Vikash Dubey*

Abstract

In view of the interesting informations revealed by the studies of nitrogen in silicon, an attempt has been made to look into the behaviour of low temperature pre-annealing at 4800C for shorter duration of 10 h and longer duration of 40 h in N-doped CZ-Si annealed at 6500C up to 90 h by subjecting the samples to two basic characterizing tools. Low temperature pre-annealing for a shorter duration followed by annealing at 6500C does not register an increase in donor concentration, while reverse is true for pre-annealing of 40 h. Longer pre-annealing time at low temperature brings about a larger increase in the donor concentration during the annealing. Donors generated in N-undoped CZ-Si samples never attain saturation up to 90 h of annealing at 6500C, while in N-doped silicon annealed for 60 h, the donors generated reached a saturation stage and no change is observed by annealing for longer duration.

Downloads

Download data is not yet available.

Published

28-09-2011

How to Cite

Dubey*, V. (2011). Effect of Low Temperature Pre-annealing on Oxygen Related Donors Formation in N-Doped CZ-Silicon. Recent Research in Science and Technology, 3(7). Retrieved from https://updatepublishing.com/journal/index.php/rrst/article/view/740

Issue

Section

Physics